Mass transport phenomena in copper nanowires at high current density

Electromigration in Cu has been extensively investigated as the root cause of typical breakdown failure in Cu interconnects. In this study Cu nanowires connected to Au electrodes are fabricated and observed using in situ transmission electron microscopy to investigate the electro- and thermo-migrati...

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Bibliographic Details
Published in:Nano research 2016-04, Vol.9 (4), p.1071-1078
Main Authors: Huang, Yu-Ting, Huang, Chun-Wei, Chen, Jui-Yuan, Ting, Yi-Hsin, Cheng, Shao-Liang, Liao, Chien-Neng, Wu, Wen-Wei
Format: Article
Language:English
Subjects:
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Chemistry and Materials Science
Condensed Matter Physics
CONNECTORS (ELECTRICAL)
Copper
CURRENT
Current density
DENSITY
Direct current
Electric fields
ELECTROMIGRATION
Electron microscopy
Gold
Interconnections
Mass transport
Materials Science
MICROSTRUCTURES
MICROWIRE
Migration
Nanostructure
Nanotechnology
Nanowires
Research Article
Studies
Thermomigration
Transmission electron microscopy
Transport
Transport phenomena
传输现象
击穿故障
纳米线
质量
迁移过程
透射电子显微镜
铜互连
高电流密度
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Summary:Electromigration in Cu has been extensively investigated as the root cause of typical breakdown failure in Cu interconnects. In this study Cu nanowires connected to Au electrodes are fabricated and observed using in situ transmission electron microscopy to investigate the electro- and thermo-migration processes that are induced by direct current sweeps. We observe the dynamic evolution of different mass transport mechanisms. A current density on the order of 106 A/cm^2 and a temperature of approximately 400 ℃ are sufficient to induce electro- and thermo-migration, respectively. Observations of the migration processes activated by increasing temperatures indicate that the migration direction of Cu atoms is dependent on the net force from the electric field and electron wind. This work is expected to support future design efforts to improve the robustness of Cu interconnects.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-016-0998-9