The effect of Ar plasma etching time on the microstructure, optical and photoelectric properties of CdZnTe films

In this work, Ar plasma etching was performed to polycrystalline CdZnTe thick films grown from close-spaced sublimation method. The effect of Ar plasma etching time on the microstructure, optical and photoelectric properties of CdZnTe films were investigated by using AFM, XRD, UV–visible spectrophot...

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Bibliographic Details
Published in:Surface & coatings technology 2016-06, Vol.296, p.104-107
Main Authors: Zhang, Yuelu, Huang, Jian, Zhang, Jijun, Mou, Qun, Shen, Yue, Wang, Linjun
Format: Article
Language:English
Subjects:
Cadmium zinc tellurides
CdZnTe film
Close-spaced sublimation
Leakage current
Microstructure
Optical properties
Photoelectric effect
Plasma etching
Surface roughness
Surface treatment
Thick films
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Summary:In this work, Ar plasma etching was performed to polycrystalline CdZnTe thick films grown from close-spaced sublimation method. The effect of Ar plasma etching time on the microstructure, optical and photoelectric properties of CdZnTe films were investigated by using AFM, XRD, UV–visible spectrophotometer and current-voltage characterization system. The results showed that proper plasma etching time can significantly improve the surface roughness and passivate the CdZnTe film surface, leading to less surface leakage current and higher photo-response of the Au/CdZnTe/FTO photo-conductive structure. Its photo-response sensitivity under 281nm UV irradiation increases with one order of magnitude after 5min' etching. •CdZnTe films were treated by Ar plasma etching process with various etching time.•The structure and surface roughness of the film was closely related to etching time.•The CdZnTe film with 5min plasma etching showed lower dark-current.•CdZnTe films with 5min plasma etching showed better photo-response to UV light.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2016.04.036