Breaking the Speed Limits of Phase-Change Memory

Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-c...

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Published in:Science (American Association for the Advancement of Science) 2012-06, Vol.336 (6088), p.1566-1569
Main Authors: Loke, D., Lee, T. H., Wang, W. J., Shi, L. P., Zhao, R., Yeo, Y. C., Chong, T. C., Elliott, S. R.
Format: Article
Language:English
Subjects:
Annealing
Atoms
Condensed matter: structure, mechanical and thermal properties
Constants
Crystal defects
Crystal dislocations
Crystal structure
Crystallization
Cubes
Data storage
Electric fields
Electric potential
Electric pulses
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Glass transitions
Kinetics
Materials
Memory
Memory devices
Nucleation
Phase transitions
Physics
Random access memory
Specific phase transitions
Switches
Transfer Rates (College)
Transmission electron microscopy
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cited_by cdi_FETCH-LOGICAL-c509t-f1b8a99f0f402d03a76d3484fb7a3f56f58a2ec31c42d7bb265bd569543f6c143
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container_issue 6088
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container_title Science (American Association for the Advancement of Science)
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creator Loke, D.
Lee, T. H.
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Shi, L. P.
Zhao, R.
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Chong, T. C.
Elliott, S. R.
description Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.
doi_str_mv 10.1126/science.1221561
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source American Association for the Advancement of Science; JSTOR Archival Journals and Primary Sources Collection
subjects Annealing
Atoms
Condensed matter: structure, mechanical and thermal properties
Constants
Crystal defects
Crystal dislocations
Crystal structure
Crystallization
Cubes
Data storage
Electric fields
Electric potential
Electric pulses
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Glass transitions
Kinetics
Materials
Memory
Memory devices
Nucleation
Phase transitions
Physics
Random access memory
Specific phase transitions
Switches
Transfer Rates (College)
Transmission electron microscopy
title Breaking the Speed Limits of Phase-Change Memory
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