Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 MHz repetition rate

The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The ob...

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Published in:Optics express 2016-07, Vol.24 (14), p.15468-15477
Main Authors: Sobierajski, Ryszard, Jacyna, Iwanna, Dłużewski, Piotr, Klepka, Marcin T, Klinger, Dorota, Pełka, Jerzy B, Burian, Tomáš, Hájková, Věra, Juha, Libor, Saksl, Karel, Vozda, Vojtěch, Makhotkin, Igor, Louis, Eric, Faatz, Bart, Tiedtke, Kai, Toleikis, Sven, Enkisch, Hartmut, Hermann, Martin, Strobel, Sebastian, Loch, Rolf A, Chalupsky, Jaromir
Format: Article
Language:English
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Summary:The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm . Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm ) and liquid state (54 mJ/cm ), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.24.015468