Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

Hafnium oxide (HfO2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient te...

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Bibliographic Details
Published in:Thin solid films 2016-02, Vol.600, p.36-42
Main Authors: Salomone, L. Sambuco, Lipovetzky, J., Carbonetto, S.H., García Inza, M.A., Redin, E.G., Campabadal, F., Faigón, A.
Format: Article
Language:English
Subjects:
Atomic layer deposition
Capacitors
Conduction band
Constants
Density
Electric fields
Electrical characterization
Fittings
Hafnium oxide
Modeling
Trapping
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Summary:Hafnium oxide (HfO2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7nm from the Si/HfO2 interface at an energy level Et=1.59eV below the HfO2 conduction band edge with density Nt=1.36×1019cm−3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. •We characterized deep electron trapping/detrapping in HfO2 structures.•We modeled the experimental results through a tunneling-based model.•We obtained an electron trap energy level of 1.59eV below conduction band edge.•We obtained a spatial trap distribution extending 1.7nm within the insulator.•A simplified tunneling front model is able to reproduce the experimental results.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2016.01.007