Influence of wet chemical cleaning on quantum efficiency of GaN photocathode

GaN samples 1-3 are cleaned by a 2：2：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%） to de-ionized water;hydrochloric acid（37%）;or a 4：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%）.The samples are activated by Cs/O after the same annealing process.X-ray photoelectron spectros...

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Bibliographic Details
Published in:Chinese physics B 2013-02, Vol.22 (2), p.515-518
Main Author: 王晓晖 高频 王洪刚 李飙 常本康
Format: Article
Language:English
Subjects:
Chemical cleaning
Gallium nitrides
GaN
Hydrochloric acid
Hydrogen peroxide
Photocathodes
Quantum efficiency
Sulfuric acid
X-rays
X射线光电子能谱
光电阴极
化学清洗方法
去离子水
后退火工艺
过氧化氢
量子效率
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Summary:GaN samples 1-3 are cleaned by a 2：2：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%） to de-ionized water;hydrochloric acid（37%）;or a 4：1 solution of sulfuric acid（98%） to hydrogen peroxide（30%）.The samples are activated by Cs/O after the same annealing process.X-ray photoelectron spectroscopy after the different ways of wet chemical cleaning shows：sample 1 has the largest proportion of Ga,N,and O among the three samples,while its C content is the lowest.After activation the quantum efficiency curves show sample 1 has the best photocathode performance.We think the wet chemical cleaning method is a process which will mainly remove C contamination.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/2/027901