Preparation,Characterization and Electronic Properties of Fluorine-doped Tin Oxide Films

Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal stru...

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Bibliographic Details
Published in:Journal of Wuhan University of Technology. Materials science edition 2016-02, Vol.31 (1), p.48-51
Main Author: Velázquez-Nevárez G A Vargas-García J R Lartundo-Rojas L CHEN Fei SHEN Qiang ZHANG Lianmeng
Format: Article
Language:English
Subjects:
Advanced Films and Coatings
Chemistry and Materials Science
Concentration (composition)
Doping
Fluorine
Materials Science
Precursors
SnO2薄膜
Tin dioxide
Tin oxides
Valence band
X-ray photoelectron spectroscopy
制备
氟掺杂
氧化锡薄膜
溶胶-凝胶
电子性质
表征
透明导电薄膜
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Summary:Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO2 films.In addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.
ISSN:1000-2413
1993-0437
DOI:10.1007/s11595-016-1328-5