How morphology determines the charge storage properties of Ge nanocrystals in HfO2

The strong correlation between morphology and charge storage properties of HfO2/Ge/HfO2/Si trilayer structures was evidenced. The morphology of structures deposited by magnetron sputtering and electron beam evaporation was tailored by rapid thermal annealing and investigated by transmission electron...

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Bibliographic Details
Published in:Scripta materialia 2016-03, Vol.113, p.135-138
Main Authors: Slav, A., Palade, C., Lepadatu, A.M., Ciurea, M.L., Teodorescu, V.S., Lazanu, S., Maraloiu, A.V., Logofatu, C., Braic, M., Kiss, A.
Format: Article
Language:English
Subjects:
Charge
Charge storage properties
Density
Evaporation
Germanium
Hafnium oxide
High-angle annular dark field (HAADF)
High-resolution electron microscopy (HREM)
Magnetron sputtering
Morphology
Nanocrystals
Nanostructured materials
X-ray photoelectron spectroscopy (XPS)
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Summary:The strong correlation between morphology and charge storage properties of HfO2/Ge/HfO2/Si trilayer structures was evidenced. The morphology of structures deposited by magnetron sputtering and electron beam evaporation was tailored by rapid thermal annealing and investigated by transmission electron microscopy, Raman and X-ray photoelectron spectroscopies. The best hysteresis loops (capacitance–voltage characteristics) were obtained for trilayers with high density Ge nanocrystals located in the position of as-deposited Ge layer. The decrease of Ge nanocrystals density narrows the memory window, by spreading Ge atoms into HfO2 matrix (sputtered trilayers), or by Ge atoms expulsion toward HfO2 nanocrystals surface (evaporated trilayers). [Display omitted]
ISSN:1359-6462
1872-8456
DOI:10.1016/j.scriptamat.2015.10.028