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Heteroatom doped graphene in photocatalysis: A review

•Doping graphene with foreign atoms extends its function in the photocatalyst system.•Chemically doped graphene improved the electrical conductivity.•Chemically doped graphene outperform conventional rGO as a semiconductor support.•Chemically doped graphene cause bandgap opening and formation of cat...

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Bibliographic Details
Published in:Applied surface science 2015-12, Vol.358, p.2-14
Main Authors: Putri, Lutfi Kurnianditia, Ong, Wee-Jun, Chang, Wei Sea, Chai, Siang-Piao
Format: Article
Language:English
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Summary:•Doping graphene with foreign atoms extends its function in the photocatalyst system.•Chemically doped graphene improved the electrical conductivity.•Chemically doped graphene outperform conventional rGO as a semiconductor support.•Chemically doped graphene cause bandgap opening and formation of catalytic sites.•Chemically doped graphene can behave as functional standalone photocatalyst. Photocatalysis has been a focus of great attention due to its useful environmental applications such as eliminating hazardous pollutants and generating sustainable energy. Coincidentally, graphene, a 2D allotrope of carbon, has also infiltrated many research fields due to its outstanding properties – photocatalysis being no exception. As of recent, there has been growing research focus on heteroatom (O, N, B, P and S) doping of graphene and its emergent application opportunities. In this study, rather than the familiar graphene as the electron transfer medium that is normally integrated in a photocatalyst system, we contrarily explore the implication of heteroatom doped graphene and the underlying mechanism behind their advantageous uses in photocatalysis. This review surveys the literature and highlights recent progress and challenges in the development of chemically doped graphene in the photocatalysis scene. It is desired that this review will promote awareness and encourage further investigations for the development in this budding research area.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2015.08.177