The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structu...

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Bibliographic Details
Published in:Chinese physics B 2009-10, Vol.18 (10), p.4413-4417
Main Authors: Yu-Xin, Wu, Jian-Jun, Zhu, De-Gang, Zhao, Zong-Shun, Liu, De-Sheng, Jiang, Shu-Ming, Zhang, Yu-Tian, Wang, Hui, Wang, Gui-Feng, Chen, Hui, Yang
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum nitride
Buffer layers
Compressive properties
Cracks
Diffraction
Edge dislocations
Electron microscopy
Epitaxial layers
Gallium nitrides
Insertion
Interlayers
Metalorganic chemical vapor deposition
Optical microscopy
Raman scattering
Reduction
Silicon substrates
Spectroscopy
Strain
Threading dislocations
X-rays
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Summary:High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/18/10/051