Loading…
Influence of RF power on performance of sputtered a-IGZO based liquid crystal cells
The influence of radio-frequency (RF) power on sputter-deposited amorphous indium gallium zinc oxide (a-IGZO) films and the corresponding liquid crystal cell performances have been investigated. The inorganic films were used as alternative alignment layers for liquid crystal display cells. The colum...
Saved in:
Published in: | Thin solid films 2015-12, Vol.596, p.56-62 |
---|---|
Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | The influence of radio-frequency (RF) power on sputter-deposited amorphous indium gallium zinc oxide (a-IGZO) films and the corresponding liquid crystal cell performances have been investigated. The inorganic films were used as alternative alignment layers for liquid crystal display cells. The columnar growth of film was achieved by non-contact, fixed oblique deposition using RF sputtering at the power of 50W, 60W and 70W. The experiments have been carried out to compare the physical characteristics with those of the traditional polyimide (PI) alignment layers used for liquid crystal cells. The cell performances in voltage-transmittance, contrast ratio, and response time were all evaluated. The liquid crystal pretilt angle has been determined to be about 13° using 70W power deposited a-IGZO film. It was 6° for the 60W deposited film and only 1.5° for the PI alignment film. The experimental cell rise time and fall time was 1.25ms and 2.96ms, respectively. Thus, a very quick response time of 4.21ms has been achieved. It was about 6.62ms for the PI alignment control cell.
•Radio-frequency power of indium gallium zinc oxide film deposition was studied.•The oblique deposition technique was used to prepare the alignment layers.•The liquid crystal pretilt angle was about 13° using 70W.•The corresponding liquid crystal cells exhibited fast response time at 4.21ms.•The cells showed low threshold voltage of 1.78V and excellent contrast ratio. |
---|---|
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2015.08.026 |