Electrical activation of nitrogen heavily implanted 3C-SiC(100)

•Nitrogen is fully activated by 1175°C annealing for 1.5×1019cm−3 doped 3C-SiC.•Free donor concentration is found to readily saturate in 3C-SiC at ∼7×1019cm−3.•3C-SiC is found to have complete donor thermal ionization above 150K.•Donor in 1.5×1019cm−3 nitrogen implanted 3C-SiC has an energy level ∼1...

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Bibliographic Details
Published in:Applied surface science 2015-10, Vol.353, p.958-963
Main Authors: Li, Fan, Sharma, Yogesh, Shah, Vishal, Jennings, Mike, Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig, Leadley, David, Mawby, Phil
Format: Article
Language:English
Subjects:
3C-SiC
Activation
Degenerated film
Deposition
Design engineering
Electrical resistivity
Hall
Implantation
Implants
Post-implantation activation
Silicon dioxide
Surface chemistry
Van der Pauw
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Summary:•Nitrogen is fully activated by 1175°C annealing for 1.5×1019cm−3 doped 3C-SiC.•Free donor concentration is found to readily saturate in 3C-SiC at ∼7×1019cm−3.•3C-SiC is found to have complete donor thermal ionization above 150K.•Donor in 1.5×1019cm−3 nitrogen implanted 3C-SiC has an energy level ∼15meV.•The SiO2 cap is found to have a bigger influence on low and medium doped samples. A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6×1020cm−3 at 20K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5×1019cm−3, donor level 15meV) to ∼12% for 6×1020cm−3. Free donors are found to saturate in 3C-SiC at ∼7×1019cm−3. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO2 layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4mΩcm) has been observed for medium doped (4×1019cm−3) sample with PIA 1375°C 2h without a SiO2 cap.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2015.06.169