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Performance of CMS 3D silicon pixel detectors before and after irradiation

Three-dimensional (3D) silicon detectors are emerging as one of the most promising technologies for the innermost layers of tracking devices for the foreseen upgrades of the LHC. 3D sensors compatible with the CMS readout, fabricated at FBK (Trento, Italy), were tested in the laboratory and with a 1...

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Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2013-12, Vol.730, p.33-37
Main Authors: Obertino, M., Solano, A., Alagoz, E., Andresen, J., Arndt, K., Bolla, G., Bortoletto, D., Boscardin, M., Brosius, R., Bubna, M., Dalla Betta, G.-F., Jensen, F., Krzywda, A., Kumar, A., Kwan, S., Lei, C.M., Menasce, D., Moroni, L., Ngadiuba, J., Osipenkov, I., Perera, L., Povoli, M., Prosser, A., Rivera, R., Shipsey, I., Tan, P., Terzo, S., Uplegger, L., Wagner, S., Vilela Pereira, A., Dinardo, M.
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Language:English
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Summary:Three-dimensional (3D) silicon detectors are emerging as one of the most promising technologies for the innermost layers of tracking devices for the foreseen upgrades of the LHC. 3D sensors compatible with the CMS readout, fabricated at FBK (Trento, Italy), were tested in the laboratory and with a 120GeV/c proton beam at the FNAL test beam facility, before and after irradiation up to a fluence of 3.5×1015neq/cm2. Preliminary results of the data analysis are presented. •3D characterized in laboratory, tested with beam and irradiated with 800MeV protons.•Leakage current: few hundred nA before irradiation, ∼10μA after irradiation.•Depletion voltage: 20V. Breakdown voltage: 25–35V, not increasing after irradiation.•Efficiency: 97.5%, increasing when tilting sensors with respect to the beam.•Radiation effect: lower efficiency and lower collected charge.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2013.04.048