Inverse spin Hall effect of antiferromagnetic MnIr in exchange biased NiFe/MnIr films

Antiferromagnetic Mn3Ir, which is widely employed in exchange-biased applications, has attracted much attention recently due to its predicted and subsequently observed large spin Hall effect, therefore increasing its potential for spintronic devices in place of conventional paramagnetic 5d spin Hall...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2015-09, Vol.48 (34), p.345002-6
Main Authors: Soh, Wee Tee, Yeow, Yasmin, Zhong, Xiaoxi, Ong, C K
Format: Article
Language:English
Subjects:
Electric potential
Exchange
exchange bias
Intermetallics
Iron compounds
Nickel base alloys
Nickel compounds
spin Hall effect
spin pumping
Spintronics
Voltage
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Summary:Antiferromagnetic Mn3Ir, which is widely employed in exchange-biased applications, has attracted much attention recently due to its predicted and subsequently observed large spin Hall effect, therefore increasing its potential for spintronic devices in place of conventional paramagnetic 5d spin Hall metals. (Pt, Ta and W) Via the electrical detection of ferromagnetic resonance, we study a series of exchange biased NiFe/MnIr films for various MnIr thicknesses. In these systems, spin-pumped spin currents from NiFe are converted into dc voltages within MnIr via the inverse spin Hall effect (ISHE), which mixes with spin rectification voltages generated from NiFe. Through angular measurements, we separate these different voltage contributions to qualitatively detect non-zero ISHE in MnIr, which coexists with a non-zero unidirectional anisotropy. We find significant extrinsic damping contributions which prevent the accurate quantification of spin pumping-induced ISHE in MnIr films. The results show that spin currents may propagate and dissipate in MnIr films through ISHE in the presence of exchange bias.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/48/34/345002