Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition

The synthesis of atomically thin transition-metal disulfides (MS2) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the synthesis of WS2 nanosheets through the sulfurizati...

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Bibliographic Details
Published in:ACS nano 2013-12, Vol.7 (12), p.11333-11340
Main Authors: Song, Jeong-Gyu, Park, Jusang, Lee, Wonseon, Choi, Taejin, Jung, Hanearl, Lee, Chang Wan, Hwang, Sung-Hwan, Myoung, Jae Min, Jung, Jae-Hoon, Kim, Soo-Hyun, Lansalot-Matras, Clement, Kim, Hyungjun
Format: Article
Language:English
Subjects:
Controllability
Deposition
Devices
Disulfides
Molybdenum disulfide
Nanostructure
Synthesis
Tungsten oxides
Variability
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Summary:The synthesis of atomically thin transition-metal disulfides (MS2) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the synthesis of WS2 nanosheets through the sulfurization of an atomic layer deposition (ALD) WO3 film with systematic layer controllability and wafer-level uniformity. The X-ray photoemission spectroscopy, Raman, and photoluminescence measurements exhibit that the ALD-based WS2 nanosheets have good stoichiometry, clear Raman shift, and bandgap dependence as a function of the number of layers. The electron mobility of the monolayer WS2 measured using a field-effect transistor (FET) with a high-k dielectric gate insulator is shown to be better than that of CVD-grown WS2, and the subthreshold swing is comparable to that of an exfoliated MoS2 FET device. Moreover, by utilizing the high conformality of the ALD process, we have developed a process for the fabrication of WS2 nanotubes.
ISSN:1936-0851
1936-086X
DOI:10.1021/nn405194e