Loading…

Improved Electrical Conductivity of Graphene Films Integrated with Metal Nanowires

Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found...

Full description

Saved in:
Bibliographic Details
Published in:Nano letters 2012-11, Vol.12 (11), p.5679-5683
Main Authors: Kholmanov, Iskandar N, Magnuson, Carl W, Aliev, Ali E, Li, Huifeng, Zhang, Bin, Suk, Ji Won, Zhang, Li Li, Peng, Eric, Mousavi, S. Hossein, Khanikaev, Alexander B, Piner, Richard, Shvets, Gennady, Ruoff, Rodney S
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Polycrystalline graphene grown by chemical vapor deposition (CVD) on metals and transferred onto arbitrary substrates has line defects and disruptions such as wrinkles, ripples, and folding that adversely affect graphene transport properties through the scattering of the charge carriers. It is found that graphene assembled with metal nanowires (NWs) dramatically decreases the resistance of graphene films. Graphene/NW films with a sheet resistance comparable to that of the intrinsic resistance of graphene have been obtained and tested as a transparent electrode replacing indium tin oxide films in electrochromic (EC) devices. The successful integration of such graphene/NW films into EC devices demonstrates their potential for a wide range of optoelectronic device applications.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl302870x