Magnetic anisotropy in Fe films deposited on SiO2/Si(001) and Si(001) substrates

The magnetic anisotropy of 10nm iron films deposited in an ultra high vacuum on the Si(001) surface and on the Si(001) over caped by 1.5nm layer of SiO2 was investigated. There is in-plane uniaxial magnetic anisotropy caused by oblique sputtering in the Fe films on a SiO2 buffer layer. The easy magn...

Full description

Saved in:
Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2014-02, Vol.351, p.104-108
Main Authors: Komogortsev, S.V., Varnakov, S.N., Satsuk, S.A., Yakovlev, I.A., Ovchinnikov, S.G.
Format: Article
Language:English
Subjects:
Anisotropy
Crystallography
Deposition
Epitaxial growth
Iron
Magnetic anisotropy
Magnetization
Silicon dioxide
Silicon substrates
Thin film
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The magnetic anisotropy of 10nm iron films deposited in an ultra high vacuum on the Si(001) surface and on the Si(001) over caped by 1.5nm layer of SiO2 was investigated. There is in-plane uniaxial magnetic anisotropy caused by oblique sputtering in the Fe films on a SiO2 buffer layer. The easy magnetization axis is always normal to the atomic flux direction but the value of the anisotropy field is different depending on the axial angle among sputtering direction and the substrate crystallographic axes. It is argued that the uniaxial magnetic anisotropy results from elongated surface roughness formation during film deposition. Several easy magnetization axes are found in Fe/Si(001) film without the SiO2 buffer layer. The mutual orientation of the main easy axes and Si crystallographic axes indicates that there is epitaxial growth of Fe/Si(001) film with the following orientation relative to the substrate: Fe[100] ∥Si[110]. The anisotropy energy of Fe/Si(001) film is estimated by simulation of angle dependence of remnant magnetization mr as the sum of the mr angle plot from uniaxial anisotropy (induced by oblique deposition) and the polar plot from biaxial magnetocrystalline anisotropy. •Magnetic anisotropy of iron films deposited on the Si(001) surface and on the Si(001) over caped by 1.5nm layer of SiO2 was investigated.•There is in-plane uniaxial magnetic anisotropy caused by oblique sputtering in the Fe films on the SiO2 buffer layer.•The value of the anisotropy field is different depending on the axial angle among sputtering direction and the substrate crystallographic axes.•There are several easy magnetization axes in Fe/Si(001) film without the SiO2 buffer layer.•There is epitaxial growth of Fe/Si(001) film with the following orientation relative to the substrate: Fe[100]∥ Si[110].
ISSN:0304-8853
DOI:10.1016/j.jmmm.2013.09.058