Compatibility and optoelectronic of ZnSe nano crystalline thin film

We report the room temperature synthesis of zinc selenide （ZnSe） nano crystalline thin film on quartz by using a relatively simple and low cost closed space sublimation process （CSSP）. The compatibility of the prepared thin films for optoelectronic applications was assessed by X-ray diffraction （XRD...

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Bibliographic Details
Published in:Chinese physics B 2012-09, Vol.21 (9), p.460-465
Main Authors: Khan, Taj Muhammad, BiBi, Tayyaba
Format: Article
Language:English
Subjects:
Atomic force microscopy
Compatibility
FT-IR
Nanocrystals
Optoelectronics
Roughness
Scanning electron microscopy
Thin films
X-ray diffraction
X-射线衍射
Zinc selenides
傅里叶变换红外光谱
光电应用
兼容性
扫描电子显微镜
硒化锌薄膜
纳米晶薄膜
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Summary:We report the room temperature synthesis of zinc selenide （ZnSe） nano crystalline thin film on quartz by using a relatively simple and low cost closed space sublimation process （CSSP）. The compatibility of the prepared thin films for optoelectronic applications was assessed by X-ray diffraction （XRD）, atomic force microscope （AFM）, scanning electron microscope （SEM）, Raman spectroscopy, photoluminescence, and Fourier transform infrared spectroscopy （FT-IR）. The XRD confirmed that the films were polycrystalline with the preferential orientation along the （111） plane corresponding to the cubic phase （2θ = 27.28°）. The AFM indicated that the ZnSe film presented a smooth and compact morphology with RMS roughness 19.86 nm. The longitudinal optical phonon modes were observed at 247 cm^-1 and 490 cm^-1 attributed to the cubic structured ZnSe. The Zn-Se stretching band was confirmed by the FT-IR. The microstructure and compositional analysis was made with the SEM. The grain size, dislocation density, and strain calculated were co-related. All these properties manifested a good quality, high stability, finely adhesive, and closely packed structured ZnSe thin film for optoelectronic applications.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/9/097303