Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

Self-assembled Ge nanodots with areal number density up to 2.33× 1010 cm-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional pre...

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Bibliographic Details
Published in:Chinese physics B 2013-05, Vol.22 (5), p.557-563
Main Author: 熊飞 杨涛 宋肇宁 杨培志
Format: Article
Language:English
Subjects:
Density
Deposition
Germanium
Ion beam sputtering
Islands
Nanostructure
Nucleation
Temperature dependence
Three dimensional
吸附原子
密度
温度依赖性
离子束溅射沉积
纳米点
自组装
行为
锗
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Summary:Self-assembled Ge nanodots with areal number density up to 2.33× 1010 cm-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands, and to be associated with the adatom behaviors of attachment and detachment from the islands. An unusual increasing temperature dependence of nanodot density is also revealed when a high ion energy is employed in sputtering deposition, and is shown to be related to the breaking down of the superstrained wetting layer. This result is attributed to the interaction between energetic atoms and the growth surface, which mediates the island nucleation.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/5/058104