Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar

We demonstrate theoretically electrical switching of the edge state transport via a transverse electric field in a quantum spin Hall bar. By tuning the electric fields, the Fermi energy and the gate voltage, the edge channels in the both topological insulator (TI)/band insulator (BI) and TI/TI p-n j...

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Bibliographic Details
Published in:Journal of applied physics 2013-02, Vol.113 (5)
Main Authors: Cheng, Fang, Lin, L Z, Zhang, L B, Zhou, Guanghui
Format: Article
Language:English
Subjects:
Electric fields
Fermi surfaces
Insulators
P-n junctions
Quantum tunnelling
Switching
Topology
Transport
Voltage
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Summary:We demonstrate theoretically electrical switching of the edge state transport via a transverse electric field in a quantum spin Hall bar. By tuning the electric fields, the Fermi energy and the gate voltage, the edge channels in the both topological insulator (TI)/band insulator (BI) and TI/TI p-n junctions can be transited from opaque to transparent. This electrical switching behavior offers us an efficient way to control the topological edge state transport which is robust against the local perturbation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4790325