The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses

In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step-stress） are investigated to help us identify the degradation mechanisms of the AlGaN/...

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Bibliographic Details
Published in:Chinese physics B 2011-12, Vol.20 (12), p.395-399, Article 127305
Main Author: 马晓华 焦颖 马平 贺强 马骥刚 张凯 张会龙 张进成 郝跃
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitrides
Degradation
Devices
Gallium nitrides
HEMT器件
High electron mobility transistors
Inverse
Piezoelectricity
Semiconductor devices
Stresses
可靠性
热电子效应
电应力
退化机制
逆压电效应
高电子迁移率晶体管
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Summary:In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step-stress） are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] （Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415）. However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/20/12/127305