Bandgap-controlled non-equilibrium ZnO1−xSx thin films grown by pulsed laser deposition method

Although ZnO and ZnS are chemically and structurally similar, these binary compounds do not form a solid solution at room temperature for all proportions of sulfur (S) and oxygen (O) due to solubility limits of S in ZnO and O in ZnS in equilibrium states. To fabricate ZnO1−xSx thin films with 0

Bibliographic Details

Published in:	Thin solid films 2015-08, Vol.589, p.669-672
Main Authors:	Choi, H.I., Kim, S.W., Lee, M.H., Kim, D.J., Han, S.-J., Lee, W., Song, T.K., Kim, M.-H., Jeong, I.-K., Kim, W.J.
Format:	Article
Language:	English
Subjects:	Alloy Deposition Diffraction Energy gaps (solid state) Pulsed laser deposition Semiconductor Solid solutions Thin films Zinc oxide Zinc sulfides ZnO ZnS
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