Probing individual point defects in graphene via near-field Raman scattering

The Raman scattering D-peak in graphene is spatially localised in close proximity to defects. Here, we demonstrate the capability of tip-enhanced Raman spectroscopy (TERS) to probe individual point defects, even for a graphene layer with an extremely low defect density. This is of practical interest...

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Bibliographic Details
Published in:Nanoscale 2015-12, Vol.7 (46), p.19413-19418
Main Authors: Mignuzzi, Sandro, Kumar, Naresh, Brennan, Barry, Gilmore, Ian S, Richards, David, Pollard, Andrew J, Roy, Debdulal
Format: Article
Language:English
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Summary:The Raman scattering D-peak in graphene is spatially localised in close proximity to defects. Here, we demonstrate the capability of tip-enhanced Raman spectroscopy (TERS) to probe individual point defects, even for a graphene layer with an extremely low defect density. This is of practical interest for future graphene electronic devices. The measured TERS spectra enable a direct determination of the average inter-defect distance within the graphene sheet. Analysis of the TERS enhancement factor of the graphene Raman peaks highlights the preferential enhancement and symmetry-dependent selectivity of the D-peak intensity caused by zero-dimensional Raman scatterers. We demonstrate the capability of tip-enhanced Raman spectroscopy to probe individual point defects in graphene.
ISSN:2040-3364
2040-3372
DOI:10.1039/c5nr04664e