Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM

We demonstrate that it is possible to observe depth-dependent atomic displacements in a GaN crystal due to the sufficiently small depth of field achievable in the aberration-corrected scanning transmission electron microscope. The depth-dependent displacements associated with the Eshelby twist of sc...

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Bibliographic Details
Published in:Journal of physics. Conference series 2014-06, Vol.522 (1), p.12048-4
Main Authors: Lozano, J G, Guerrero-Lebrero, M P, Yasuhara, A, Okinishi, E, Zhang, S, Humphreys, C J, Galindo, P L, Hirsch, P B, Nellist, P D
Format: Article
Language:English
Subjects:
Aberration
Atomic force microscopy
Burgers vector
Crystals
Depth of field
Dislocations
Displacement
Gallium nitrides
Microscopes
Optical sectioning
Physics
Scanning electron microscopy
Screw dislocations
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Summary:We demonstrate that it is possible to observe depth-dependent atomic displacements in a GaN crystal due to the sufficiently small depth of field achievable in the aberration-corrected scanning transmission electron microscope. The depth-dependent displacements associated with the Eshelby twist of screw dislocations in GaN viewed end on are directly imaged, and makes possible the determination of the sign of the Burgers vector of the dislocation. The experimental results are in good agreement with theoretical images.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/522/1/012048