Influence of temperature on the controlled growth kinetics and superstructural phase formation of indium on a reconstructed Si (113) 3 x 2 surface

The kinetics of growth, thermal stability and superstructural phase formation of the indium atom on a reconstructed Si (113) 3 x 2 surface at room temperature (RT), as well as at high substrate temperature (HT), is discussed. It was observed that at a very low flux rate of 0.08 ML min super(-1), In-...

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Bibliographic Details
Published in:Materials research express 2014-03, Vol.1 (1), p.1-12
Main Authors: Shibin, Shibin TC, Deshmukh, Rahul, Chauhan, Amit Kumar Singh, Goswami, Lalit
Format: Article
Language:English
Subjects:
Desorption
Evolution
Formations
Heat treatment
Indium
Monolayers
Multilayers
Silicon
Silicon substrates
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Summary:The kinetics of growth, thermal stability and superstructural phase formation of the indium atom on a reconstructed Si (113) 3 x 2 surface at room temperature (RT), as well as at high substrate temperature (HT), is discussed. It was observed that at a very low flux rate of 0.08 ML min super(-1), In-adsorption at RT follows the Frank-van der Merwe (FM) growth mode, while for HT (>200 [degrees]C), In-islands (the Volmer-Weber-growth mode) were formed. The residual thermal desorption (RTD) analysis revealed the anomalous behaviour of temperature-driven layering to the clustering rearrangement of In atoms on the Si (113) surface for RT- and 200 [degrees]C-grown systems. The RTD study also demonstrates the effect of temperature on growth kinetics as well as on the multilayer/monolayer desorption pathway. The calculated bilayer desorption energy was found to be different for RT- (T sub(B), 0.48 eV) and HT- (T sub(B), 1.57 eV) grown In/Si(113) systems, while the monolayer desorption energy (T sub(M), 2.56 eV) was the same in both the cases. Various coverage-dependent superstructural phases, such as Si(113) 3 x 2 + 3 x 1, 3 x 1, 3 x 2 + 1 x 3 and 1 x 1, have been observed during the RTand HT-growth of In on the Si (113) surface. A complete phase diagram of In/Si (113) is deduced which depicts the evolution of novel phases as a function of substrate temperature and coverage.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/1/1/015909