Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs

We have investigated the total ionizing dose (TID) radiation effects in AlGaN/GaN MOS-HEMTs as a function of dose and radiation bias, and compared them with conventional HEMTs. Under 10 keV X-ray irradiation, two distinct regimes of threshold voltage (V th ) shifts have been revealed: a rapid V th s...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2013-12, Vol.60 (6), p.4074-4079
Main Authors: Xiao Sun, Saadat, Omair I., Jin Chen, Zhang, E. Xia, Cui, Sharon, Palacios, Tomas, Fleetwood, Dan M., Ma, T. P.
Format: Article
Language:English
Subjects:
ALGaN
Aluminum gallium nitride
Aluminum gallium nitrides
Aluminum oxide
Annealing
charge trapping
Field programmable gate arrays
Gallium nitride
Gallium nitrides
GaN
Gates
Hafnium oxide
HEMT
HEMTs
High electron mobility transistors
MOS
MOSFET
radiation
Radiation effects
Semiconductor devices
Silicon dioxide
total ionizing dose
Trapping
{\rm Al}_{2}{\rm O}_{3}
{\rm HfO}_{2}
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Summary:We have investigated the total ionizing dose (TID) radiation effects in AlGaN/GaN MOS-HEMTs as a function of dose and radiation bias, and compared them with conventional HEMTs. Under 10 keV X-ray irradiation, two distinct regimes of threshold voltage (V th ) shifts have been revealed: a rapid V th shift at low doses for both HEMTs and MOS-HEMTs, and an additional V th shift only found in MOS-HEMTs for doses up to at least 2 Mrad (SiO 2 ). The rapid V th shift anneals quickly and is a strong function of layer material. We attribute this portion of the V th shift to hole trapping in the AlGaN barrier layer. The V th shift at high doses found only in MOS-HEMTs is attributed to hole trapping in the gate oxide. By comparing MOSFETs with HfO 2 and Al 2 O 3 gate dielectrics that are annealed during processing at various temperatures, we find that 500 ° C annealed HfO 2 shows the most promising TID response.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2013.2278314