A Comparison of the Radiation Response of rm TaO rm x and rm TiO 2 Memristors

The effects of radiation on memristors created using tantalum oxide and titanium oxide are compared. Both technologies show changes in resistance when exposed to 800 keV Ta ion irradiation at fluences above 10 10 ~ hbox cm hbox - 2 . rm TaO rm x memristors show a gradual reduction in resistance at h...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2013-12, Vol.60 (6), p.4512-4519
Main Authors: Hughart, David R, Lohn, Andrew J, Mickel, Patrick R, Dalton, Scott M, Dodd, Paul E, Shaneyfelt, Marty R, Silva, Antoinette I, Bielejec, Edward, Vizkelethy, Gyorgy, Marshall, Michael T, McLain, Michael L, Marinella, Matthew J
Format: Article
Language:English
Subjects:
Damage
Devices
Irradiation
Mathematical analysis
Memory devices
Resistors
Switching
Titanium dioxide
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Summary:The effects of radiation on memristors created using tantalum oxide and titanium oxide are compared. Both technologies show changes in resistance when exposed to 800 keV Ta ion irradiation at fluences above 10 10 ~ hbox cm hbox - 2 . rm TaO rm x memristors show a gradual reduction in resistance at high fluences whereas rm TiO 2 memristors show gradual increases in resistance with inconsistent decreases. After irradiation rm TaO rm x devices remain fully functional and can even recover resistance with repeated switching. rm TiO 2 devices are more variable and exhibit significant increases and decreases in resistance when switching after irradiation. Irradiation with 28 MeV Si ions causes both technologies to switch from the off-state to the on-state when ionizing doses on the order of 60 Mrad(Si) or greater (as calculated by SRIM) are reached without applying current or voltage to the part. Irradiation with 10 keV X-rays up to doses of 18 Mrad(Si) in a single step show little effect on either technology. rm TaO rm x and rm TiO 2 memristors both show high tolerance for displacement damage and ionization damage and are promising candidates for future radiation-hardened non-volatile memory applications.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2013.2285516