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Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy
A 600µm thick GaN layer was successfully grown by hydride vapor phase epitaxy by replacing the standard sapphire substrate with that processed by a focused laser beam within the substrate. The effects of the laser processing on the curvature and cracking of the GaN layer were investigated. Microscop...
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| Published in: | Journal of crystal growth 2014-10, Vol.403, p.38-42 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c544t-bd947b01869a03b030f493e8b930711d939470100db38c4b0529b5332d2a4d343 |
| container_end_page | 42 |
| container_issue | |
| container_start_page | 38 |
| container_title | Journal of crystal growth |
| container_volume | 403 |
| creator | Koyama, Koji Aida, Hideo Kim, Seong-Woo Ikejiri, Kenjiro Doi, Toshiro Yamazaki, Tsutomu |
| description | A 600µm thick GaN layer was successfully grown by hydride vapor phase epitaxy by replacing the standard sapphire substrate with that processed by a focused laser beam within the substrate. The effects of the laser processing on the curvature and cracking of the GaN layer were investigated. Microscopic observations of the interior of the thick GaN layer revealed that the laser-processed substrate suppressed the generation of microcracks in the GaN layer. In addition, the laser processing was also found to reduce the change in the curvature during the GaN layer growth in comparison to that on the standard substrate. It is shown that the overlapping microcracks observed in the GaN layer on the standard sapphire substrate lead to serious cracking after thick GaN layer growth. |
| doi_str_mv | 10.1016/j.jcrysgro.2014.06.010 |
| format | article |
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The effects of the laser processing on the curvature and cracking of the GaN layer were investigated. Microscopic observations of the interior of the thick GaN layer revealed that the laser-processed substrate suppressed the generation of microcracks in the GaN layer. In addition, the laser processing was also found to reduce the change in the curvature during the GaN layer growth in comparison to that on the standard substrate. It is shown that the overlapping microcracks observed in the GaN layer on the standard sapphire substrate lead to serious cracking after thick GaN layer growth.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2014.06.010</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Cracks ; A1. Defects ; A1. Laser process ; A3. Hydride vapor phase epitaxy ; B1. Sapphire ; B2. 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The effects of the laser processing on the curvature and cracking of the GaN layer were investigated. Microscopic observations of the interior of the thick GaN layer revealed that the laser-processed substrate suppressed the generation of microcracks in the GaN layer. In addition, the laser processing was also found to reduce the change in the curvature during the GaN layer growth in comparison to that on the standard substrate. It is shown that the overlapping microcracks observed in the GaN layer on the standard sapphire substrate lead to serious cracking after thick GaN layer growth.</description><subject>A1. Cracks</subject><subject>A1. Defects</subject><subject>A1. Laser process</subject><subject>A3. Hydride vapor phase epitaxy</subject><subject>B1. Sapphire</subject><subject>B2. Semiconductor III–V materials</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Fracture mechanics</subject><subject>Gallium nitrides</subject><subject>Laser processing</subject><subject>Materials science</subject><subject>Mathematical analysis</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Microcracks</subject><subject>Physics</subject><subject>Sapphire</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>Vapor phase epitaxy</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNkE1v1DAQhi0EEkvbv1D5gsQlYfyxiX0DVXRBquBSzpa_Qryk6-DJFvLv8WoLV7iMR_L7zrzzEHLNoGXAurf7du_Lit9Kbjkw2ULXAoNnZMNUL5otAH9ONrXyBrhUL8krxD1AdTLYELMr-ecy0jzQZUz-O93Zz3SyayxI86F2GEszl-wjYgwU7TyPqUSKR4dLsUukbqXjGkoKkT7aORc6j9VE45wW-2u9JC8GO2G8enovyNfbD_c3H5u7L7tPN-_vGr-Vcmlc0LJ3wFSnLQgHAgapRVROC-gZC1rU_3oVBCeUlw62XLutEDxwK4OQ4oK8Oc-tWX8cIy7mIaGP02QPMR_RsK5XwLQW_D-kXAupenaa2p2lvmTEEgczl_Rgy2oYmBN8szd_4JsTfAOdqTGr8fXTDoveTkOxB5_wr5srVU9UpyzvzrpY2TymWAz6FA8-hgrZLybk9K9VvwFlgZ0x</recordid><startdate>20141001</startdate><enddate>20141001</enddate><creator>Koyama, Koji</creator><creator>Aida, Hideo</creator><creator>Kim, Seong-Woo</creator><creator>Ikejiri, Kenjiro</creator><creator>Doi, Toshiro</creator><creator>Yamazaki, Tsutomu</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141001</creationdate><title>Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy</title><author>Koyama, Koji ; Aida, Hideo ; Kim, Seong-Woo ; Ikejiri, Kenjiro ; Doi, Toshiro ; Yamazaki, Tsutomu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c544t-bd947b01869a03b030f493e8b930711d939470100db38c4b0529b5332d2a4d343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>A1. 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| ispartof | Journal of crystal growth, 2014-10, Vol.403, p.38-42 |
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| subjects | A1. Cracks A1. Defects A1. Laser process A3. Hydride vapor phase epitaxy B1. Sapphire B2. Semiconductor III–V materials Cross-disciplinary physics: materials science rheology Exact sciences and technology Fracture mechanics Gallium nitrides Laser processing Materials science Mathematical analysis Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Microcracks Physics Sapphire Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Vapor phase epitaxy Vapor phase epitaxy growth from vapor phase |
| title | Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy |
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