Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy

A 600µm thick GaN layer was successfully grown by hydride vapor phase epitaxy by replacing the standard sapphire substrate with that processed by a focused laser beam within the substrate. The effects of the laser processing on the curvature and cracking of the GaN layer were investigated. Microscop...

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Bibliographic Details
Published in:Journal of crystal growth 2014-10, Vol.403, p.38-42
Main Authors: Koyama, Koji, Aida, Hideo, Kim, Seong-Woo, Ikejiri, Kenjiro, Doi, Toshiro, Yamazaki, Tsutomu
Format: Article
Language:English
Subjects:
A1. Cracks
A1. Defects
A1. Laser process
A3. Hydride vapor phase epitaxy
B1. Sapphire
B2. Semiconductor III–V materials
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Fracture mechanics
Gallium nitrides
Laser processing
Materials science
Mathematical analysis
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Microcracks
Physics
Sapphire
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
Vapor phase epitaxy
Vapor phase epitaxy
growth from vapor phase
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Summary:A 600µm thick GaN layer was successfully grown by hydride vapor phase epitaxy by replacing the standard sapphire substrate with that processed by a focused laser beam within the substrate. The effects of the laser processing on the curvature and cracking of the GaN layer were investigated. Microscopic observations of the interior of the thick GaN layer revealed that the laser-processed substrate suppressed the generation of microcracks in the GaN layer. In addition, the laser processing was also found to reduce the change in the curvature during the GaN layer growth in comparison to that on the standard substrate. It is shown that the overlapping microcracks observed in the GaN layer on the standard sapphire substrate lead to serious cracking after thick GaN layer growth.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2014.06.010