Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth

A unique growth scheme is demonstrated to realize ultrathin GaAs nanowires on Si with sizes down to the sub‐10 nm regime. While this scheme preserves the bulk‐like crystal properties, correlated optical experiments reveal huge blueshifted photo­luminescence (up to ≈100 meV) with decreasing nanowire...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-04, Vol.27 (13), p.2195-2202
Main Authors: Loitsch, Bernhard, Rudolph, Daniel, Morkötter, Stefanie, Döblinger, Markus, Grimaldi, Gianluca, Hanschke, Lukas, Matich, Sonja, Parzinger, Eric, Wurstbauer, Ursula, Abstreiter, Gerhard, Finley, Jonathan J., Koblmüller, Gregor
Format: Article
Language:English
Subjects:
Cross sections
Gallium arsenide
growth
Nanowires
Optical activity
optical properties
Photoluminescence
Preserves
Quantum confinement
Semiconductors
structural properties
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Summary:A unique growth scheme is demonstrated to realize ultrathin GaAs nanowires on Si with sizes down to the sub‐10 nm regime. While this scheme preserves the bulk‐like crystal properties, correlated optical experiments reveal huge blueshifted photo­luminescence (up to ≈100 meV) with decreasing nanowire cross‐section, demonstrating very strong quantum confinement effects.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201404900