Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions

Photo-physical processes in Er-doped silica glass matrix containing Ge nanocrystals prepared by the sol-gel method are presented in this article. Strong photoluminescence at 1.54 m, important for fiber optics telecommunication systems, is observed from the different sol-gel derived glasses at room t...

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Bibliographic Details
Published in:Nanotechnology 2015-01, Vol.26 (4), p.045202-045202
Main Authors: Manna, S, Aluguri, R, Bar, R, Das, S, Prtljaga, N, Pavesi, L, Ray, S K
Format: Article
Language:English
Subjects:
1.54
Cross sections
Er sensitization
Erbium
Excitation
Ge nanocrystal
Germanium
m photoluminescence emission
Mathematical analysis
Nanocrystals
Photoluminescence
Sol gel process
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Summary:Photo-physical processes in Er-doped silica glass matrix containing Ge nanocrystals prepared by the sol-gel method are presented in this article. Strong photoluminescence at 1.54 m, important for fiber optics telecommunication systems, is observed from the different sol-gel derived glasses at room temperature. We demonstrate that Ge nanocrystals act as strong sensitizers for Er3+ ions emission and the effective Er excitation cross section increases by almost four orders of magnitude with respect to the one without Ge nanocrystals. Rate equations are considered to demonstrate the sensitization of erbium luminescence by Ge nanocrystals. Analyzing the erbium effective excitation cross section, extracted from the flux dependent rise and decay times, a Dexter type of short range energy transfer from a Ge nanocrystal to erbium ion is established.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/26/4/045202