Properties of fluorine and tin co-doped ZnO thin films deposited by sol–gel method

•F and Sn co-doped ZnO thin films were synthesized by sol–gel method.•The effects of different F doping concentrations were investigated.•The co-doped nanocrystals exhibit good crystal quality.•The origin of the photoluminescence emissions was discussed.•The films showed high transmittance and low r...

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Bibliographic Details
Published in:Journal of alloys and compounds 2013-11, Vol.576, p.31-37
Main Authors: Pan, Zhanchang, Zhang, Pengwei, Tian, Xinlong, Cheng, Guo, Xie, Yinghao, Zhang, Huangchu, Zeng, Xiangfu, Xiao, Chumin, Hu, Guanghui, Wei, Zhigang
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition
Doping
Exact sciences and technology
Fluorine
F–Sn co-doped ZnO
Glass
HRTEM
Materials science
Materials synthesis
materials processing
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Optical bandgap
Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Scanning electron microscopy
Sol gel process
Sol–gel processes
Structure of solids and liquids
crystallography
Structure of specific crystalline solids
Thin films
Tin
Various F concentrations
Zinc oxide
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Summary:•F and Sn co-doped ZnO thin films were synthesized by sol–gel method.•The effects of different F doping concentrations were investigated.•The co-doped nanocrystals exhibit good crystal quality.•The origin of the photoluminescence emissions was discussed.•The films showed high transmittance and low resistivity. Highly transparent and conducting fluorine (F) and tin (Sn) co-doped ZnO (FTZO) thin films were deposited on glass substrates by the sol–gel processing. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) with various F doping concentrations. SEM images showed that the hexagonal ZnO crystals were well-arranged on the glass substrates and the HRTEM images indicated that the individual nanocrystals are highly oriented and exhibited a perfect lattice structure. Owing to its high carrier concentration and mobility, as well as good crystal quality, a minimum resistivity of 1×10−3Ωcm was obtained from the FTZO thin film with 3% F doping, and the average optical transmittance in the entire visible wavelength region was higher than 90%. The X-ray photoelectron spectroscopy (XPS) study confirmed the substitution of Zn2+ by Sn ions and Room temperature photoluminescence (PL) observed for pure and FTZO thin films suggested the films exhibit a good crystallinity with a very low defect concentration.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2013.04.132