Gamma and X-ray sensitivity of Gd2O3 heterojunctions

We find that Gd2O3 thin films strongly favor a (−402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely fr...

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Bibliographic Details
Published in:Radiation measurements 2013-04, Vol.51-52, p.99-102
Main Authors: Colón Santana, Juan A., Young, C.M., McClory, J.W., Petrosky, J.C., Wang, X., Liu, P., Tang, Jinke, Adamiv, V.T., Burak, Ya.V., Fukutani, Keisuke, Dowben, P.A.
Format: Article
Language:English
Subjects:
Diodes
Earth sciences
Earth, ocean, space
Exact sciences and technology
Gd doping
Geochronology
Heterojunctions
Isotope geochemistry. Geochronology
Neutron detection
Oxide dielectric layers
Radiation measurement
Silicon substrates
Surface layer
Texture
Thin films
X-rays
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Summary:We find that Gd2O3 thin films strongly favor a (−402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome if Gd based semiconductor devices are to be used for solid state neutron detection applications. ► Gadolinium oxide solid state detectors are not gamma blind. ► Gd2O3 devices appear sensitive to the X-ray photoemission events. ► Thin layer Gd2O3 heterojunction devices are not very sensitive to neutrons. ► Pulsed laser deposition (PLD) Gd2O3 favors a (−402) texture growth direction.
ISSN:1350-4487
1879-0925
DOI:10.1016/j.radmeas.2013.02.021