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Gamma and X-ray sensitivity of Gd2O3 heterojunctions
We find that Gd2O3 thin films strongly favor a (−402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely fr...
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Published in: | Radiation measurements 2013-04, Vol.51-52, p.99-102 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We find that Gd2O3 thin films strongly favor a (−402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome if Gd based semiconductor devices are to be used for solid state neutron detection applications.
► Gadolinium oxide solid state detectors are not gamma blind. ► Gd2O3 devices appear sensitive to the X-ray photoemission events. ► Thin layer Gd2O3 heterojunction devices are not very sensitive to neutrons. ► Pulsed laser deposition (PLD) Gd2O3 favors a (−402) texture growth direction. |
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ISSN: | 1350-4487 1879-0925 |
DOI: | 10.1016/j.radmeas.2013.02.021 |