Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations

In this paper, simulation of InAs/GaAs quantum dot (QD) laser is performed based upon a set of eight rate equations for the carriers and photons in five energy states. Carrier dynamics in these lasers were under analysis and the rate equations are solved using 4th order Runge-Kutta method. We have s...

Full description

Saved in:
Bibliographic Details
Published in:Optics and photonics journal 2013-03, Vol.3 (1), p.112-116
Main Authors: Daraei, Ahmadreza, Izadyar, Seyed Mohsen, Chenarani, Naser
Format: Article
Language:English
Subjects:
Carriers
Dynamic tests
Dynamics
Gallium arsenide
Gallium arsenides
Indium arsenides
Lasers
Mathematical analysis
Quantum dots
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, simulation of InAs/GaAs quantum dot (QD) laser is performed based upon a set of eight rate equations for the carriers and photons in five energy states. Carrier dynamics in these lasers were under analysis and the rate equations are solved using 4th order Runge-Kutta method. We have shown that by increasing injected current to the active medium of laser, switching-on and stability time of the system would decrease and power peak and stationary power will be increased. Also, emission in any state will start when the lower state is saturated and remain steady. The results including P-I characteristic curve for the ground state (GS), first excited state (ES1), second excited state (ES2) and output power of the QD laser will be presented.
ISSN:2160-8881
2160-889X
DOI:10.4236/opj.2013.31018