Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents

High quality 1 m thick a -plane Mg x Zn 1 x O layers were produced by molecular beam epitaxy with Mg contents higher than 50%. Resonant Rutherford backscattering spectrometry combined with ion channeling revealed a uniform growth in both composition and atomic order. The lattice-site location of Mg,...

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Bibliographic Details
Published in:CrystEngComm 2012-03, Vol.14 (5), p.1637-164
Main Authors: Redondo-Cubero, A, Hierro, A, Chauveau, J.-M, Lorenz, K, Tabares, G, Franco, N, Alves, E, Muoz, E
Format: Article
Language:English
Subjects:
Backscattering
Diffraction
Magnesium
Molecular beam epitaxy
Optical properties
Photodiodes
Spectrometry
Zinc
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Summary:High quality 1 m thick a -plane Mg x Zn 1 x O layers were produced by molecular beam epitaxy with Mg contents higher than 50%. Resonant Rutherford backscattering spectrometry combined with ion channeling revealed a uniform growth in both composition and atomic order. The lattice-site location of Mg, Zn and O elements was determined independently, proving the substitutional behaviour of Mg in Zn-sites of the wurtzite lattice. X-Ray diffraction pole figure analysis also confirms the absence of phase separation. Optical properties at such high Mg contents were studied in Schottky photodiodes. The substitutional behaviour of Mg in a -plane epilayers with contents above 50% is demonstrated by resonant ion channelling. The single phase character was additionally demonstrated by X-ray diffraction and, finally, the potential use of these films for optoelectronic devices is shown.
ISSN:1466-8033
1466-8033
DOI:10.1039/c2ce06315h