Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)

Effects of Cu surface treatment (NH3 plasma irradiation) before the cap dielectric deposition on low-k surface damage and Cu surface cleaning were systematically investigated. From the blanket film surface damage evaluations of porous low-k film with high carbon content and the oxygen removal on bla...

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Bibliographic Details
Published in:Microelectronic engineering 2012-04, Vol.92, p.62-66
Main Authors: ITO, F, SHOBHA, H, PINTO, T, RYAN, E. T, MADAN, A, HU, C.-K, SPOONER, T, TAGAMI, M, NOGAMI, T, COHEN, S, OSTROVSKI, Y, MOLIS, S, MALONEY, K, FEMIAK, J, PROTZMAN, J
Format: Article
Language:English
Subjects:
Applied sciences
Blanketing
CONCRETE
Condensed matter: structure, mechanical and thermal properties
CONNECTORS (ELECTRICAL)
Copper
Cross-disciplinary physics: materials science
rheology
Damage
DEPOSITION
Dielectrics
Diffusion in solids
Electromigration
Exact sciences and technology
High-pressure and shock-wave effects in solids and liquids
INLAYS
INSULATION (ELECTRICAL)
Materials science
Mechanical and acoustical properties of condensed matter
MECHANICAL POLISHING
Metals. Metallurgy
Physics
PLASMAS
POLISHING
Production techniques
Reinforced concrete
Surface treatment
Surface treatments
Transport properties of condensed matter (nonelectronic)
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Summary:Effects of Cu surface treatment (NH3 plasma irradiation) before the cap dielectric deposition on low-k surface damage and Cu surface cleaning were systematically investigated. From the blanket film surface damage evaluations of porous low-k film with high carbon content and the oxygen removal on blanket Cu film after chemical mechanical polishing (CMP), the optimized NH3 plasma condition such as high RF power and high pressure exhibited the high efficiency for oxygen removal from the Cu surface without increasing the k-value of low-k film. The low-k/Cu interconnect (line/space = 40/40 nm) for 22 nm-node with the high plasma resistant low-k film and the optimized Cu surface treatment showed longer electro-migration lifetime without large degradation of RC performance.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2011.01.077