The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder

The defect formation mechanism in chemical vapor deposition grown single layer graphene devices has been investigated by increasing electron beam (e-beam) irradiation doses gradually up to 750e−/nm2. The evolution of D peaks in Raman spectra provides an evidence of strong lattice disorder due to e-b...

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Bibliographic Details
Published in:Carbon (New York) 2013-08, Vol.59, p.366-371
Main Authors: Iqbal, M.Z., Kelekci, O., Iqbal, M.W., Eom, Jonghwa
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Crystal defects
Disorders
Electrons and positron radiation effects
Evolution
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Graphene
Irradiation
Materials science
Mathematical models
Methods of deposition of films and coatings
film growth and epitaxy
Physical radiation effects, radiation damage
Physics
Specific materials
Structure of solids and liquids
crystallography
Trajectories
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Summary:The defect formation mechanism in chemical vapor deposition grown single layer graphene devices has been investigated by increasing electron beam (e-beam) irradiation doses gradually up to 750e−/nm2. The evolution of D peaks in Raman spectra provides an evidence of strong lattice disorder due to e-beam irradiation. Particularly, the trajectory of D and G peak intensities ratio (ID/IG) suggests that the transformation of graphene from crystalline to the nanocrystalline and then towards amorphous form with increasing irradiation dose. The defect parameters were calculated by phenomenological model of amorphization trajectory for graphitic materials. The mobility decreasing gradually from ∼1200 to ∼80cm2/V s with gradual increase of irradiation dose, which implies the formation of localized states in e-beam irradiated graphene. The Dirac point is shifted towards negative gate voltage which indicates the n-doping in graphene with increasing e-beam irradiation dose.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2013.03.030