A low-IF RX two-point capital sigma Delta -modulation TX CMOS single-chip Bluetooth solution

A new low-cost concept for a system-on-chip Bluetooth solution is proposed in this paper. The single chip includes all necessary baseband and RF parts to achieve full Bluetooth functionality and is implemented in a standard 0.25- mu m CMOS technology. The two-point modulation capital sigma Delta fra...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2001-01, Vol.49 (9)
Main Authors: Durdodt, C, Friedrich, M, Grewing, C, Hammes, M, Hanke, A, Heinen, S, Oehm, J, Pham-Stabner, D, Seippel, D, Theil, D, Van Waasen, S, Wagner, E
Format: Article
Language:English
Subjects:
Bluetooth
CMOS
Electric potential
Microwaves
Modulation
Power supplies
Voltage
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Summary:A new low-cost concept for a system-on-chip Bluetooth solution is proposed in this paper. The single chip includes all necessary baseband and RF parts to achieve full Bluetooth functionality and is implemented in a standard 0.25- mu m CMOS technology. The two-point modulation capital sigma Delta fractional N phase-locked loop achieves a phase noise of -124 dBc/Hz at 3-MHz offset. The sensitivity of the embedded low-IF receiver is measured to be -82 dBm at a bit error rate of 0.1%. The power supply voltages for the digital and analog parts are internally regulated to 2.65 V. The maximum current consumption of the analog part is 60 mA
ISSN:0018-9480
DOI:10.1109/22.942563