SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

SiC Schottky diode varactors with a high breakdown voltage, a high tuning ratio, and a low series resistance have been designed and fabricated. These characteristics are particularly necessary for the dynamic load modulation of high power amplifiers (PAs), which is an attractive alternative to other...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2008-07, Vol.29 (7), p.728-730
Main Authors: Sudow, M., Nemati, H.M., Thorsell, M., Gustavsson, U., Andersson, K., Fager, C., Nilsson, P.-A., ul Hassan, J., Henry, A., Janzen, E., Jos, R., Rorsman, N.
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Capacitance
Chemical technology
Circuit properties
Diodes
Doping profiles
Dynamic load modulation
Dynamic loads
Electric potential
Electric, optical and optoelectronic circuits
Electrical engineering. Electrical power engineering
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
High power amplifiers
Immune system
Laboratories
Modulation
Power amplifiers
Power electronics, power supplies
Schottky
Schottky diodes
Schottky diodes electric breakdown micromechanical devices power amplifiers semiconductor doping silicon compounds varactors wide band gap semiconductors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiC
Silicon carbide
TECHNOLOGY
TEKNIKVETENSKAP
Transmitters
Tuning
varactor
Varactors
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:SiC Schottky diode varactors with a high breakdown voltage, a high tuning ratio, and a low series resistance have been designed and fabricated. These characteristics are particularly necessary for the dynamic load modulation of high power amplifiers (PAs), which is an attractive alternative to other efficiency enhancement techniques. For a SiC Schottky diode varactor with a 50- radius fabricated by using a graded doping profile, a breakdown voltage of 40 V, a tuning range of 5.6, and a series resistance of 0.9 were achieved. The results show the great potential of this type of varactors for the use in the dynamic load modulation of high power amplifiers.
ISSN:0741-3106
1558-0563
1558-0563
DOI:10.1109/LED.2008.2000642