Spectroscopic characterization of β-FeSi2 single crystals and homoepitaxial β-FeSi2 films by XPS and XAS

▶ XPS and XAS analyses reveal the chemical states of β-FeSi2 single crystals and films. ▶ The thickness of surface oxide layers can be estimated by energy-tunable XPS. ▶ The annealing of β-FeSi2 single crystal at 1173K induces the formation of FeSi. ▶ Homoepitaxial films can be grown on the β-FeSi2...

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Bibliographic Details
Published in:Applied surface science 2011-01, Vol.257 (7), p.2950-2954
Main Authors: Esaka, F., Yamamoto, H., Udono, H., Matsubayashi, N., Yamaguchi, K., Shamoto, S., Magara, M., Kimura, T.
Format: Article
Language:English
Subjects:
Annealing
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Depth profiling
Exact sciences and technology
Fe L-edge
Iron silicide
Molecular beam epitaxy
Oxides
Physics
Si K-edge
Silicon substrates
Single crystals
Spectra
Synchrotron radiation
X-ray photoelectron spectroscopy
XAS
XPS
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Summary:▶ XPS and XAS analyses reveal the chemical states of β-FeSi2 single crystals and films. ▶ The thickness of surface oxide layers can be estimated by energy-tunable XPS. ▶ The annealing of β-FeSi2 single crystal at 1173K induces the formation of FeSi. ▶ Homoepitaxial films can be grown on the β-FeSi2 single crystal by MBE. Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for β-FeSi2 single crystals and homoepitaxial β-FeSi2 films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial β-FeSi2 films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous β-FeSi2 films can be grown on the β-FeSi2 single crystals when the substrate temperatures of 973 and 1073K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states of β-FeSi2 single crystals and homoepitaxial β-FeSi2 films, which is important to reveal optimized growth conditions of homoepitaxial films.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2010.10.097