Interface engineering for improved growth of GaSb on Si(111)

Molecular beam epitaxy growth of GaSb growth on Si(111) substrates can be improved by pre-depositing Sb at high temperature. The (3×3) reconstruction obtained by this procedure results in closed heteroepitaxial GaSb layers in contrast to the direct growth on Si(111)(7×7) which produces islands. The...

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Bibliographic Details
Published in:Journal of crystal growth 2011-05, Vol.323 (1), p.401-404
Main Authors: Proessdorf, Andre, Grosse, Frank, Romanyuk, Oleksandr, Braun, Wolfgang, Jenichen, Bernd, Trampert, Achim, Riechert, Henning
Format: Article
Language:English
Subjects:
A1. Defects
A1. Reflection high-energy electron diffraction
A1. X-ray diffraction
A3. Molecular beam epitaxy
Antimony
B1. Antimonides
B2. Semiconducting III–V materials
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Crystal growth
Diffraction
Dislocations
Exact sciences and technology
Islands
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Networks
Other semiconductors
Physics
Specific materials
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Theory and models of film growth
Thin film structure and morphology
X-rays
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Summary:Molecular beam epitaxy growth of GaSb growth on Si(111) substrates can be improved by pre-depositing Sb at high temperature. The (3×3) reconstruction obtained by this procedure results in closed heteroepitaxial GaSb layers in contrast to the direct growth on Si(111)(7×7) which produces islands. The growth is characterized by atomic force microscopy, electron and X-ray diffractions. On the basis of these investigations, the formation of an interface misfit dislocation network is discussed.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.11.167