Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface

Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fab...

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Bibliographic Details
Published in:IEEE electron device letters 2004-03, Vol.25 (3), p.147-149
Main Authors: Zhiyuan Cheng, Pitera, A.J., Lee, M.L., Jongwan Jung, Hoyt, J.L., Antoniadis, D.A., Fitzgerald, E.A.
Format: Article
Language:English
Subjects:
Bonding
Charge carrier processes
Depletion
Devices
Germanium silicon alloys
Hole mobility
Insulation
Laboratories
MOSFET circuits
Oxidation
Semiconductor materials
Silicon germanides
Silicon germanium
Substrates
Wafer bonding
Wafers
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Summary:Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.823057