Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current gain cutoff frequency (F T ) of 50 GHz are achiev...

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Bibliographic Details
Published in:IEEE electron device letters 2006-01, Vol.27 (1), p.7-9
Main Authors: Ducatteau, D., Minko, A., Hoel, V., Morvan, E., Delos, E., Grimbert, B., Lahreche, H., Bove, P., Gaquiere, C., De Jaeger, J.C., Delage, S.
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Aluminum gallium nitrides
Applied sciences
Current density
Cutoff frequency
Density
Devices
Electronics
Exact sciences and technology
Gain
Gallium nitride
Gallium nitrides
HEMTs
High electron mobility transistors
high electron mobility transistors (HEMTs)
Microwave frequencies
MODFETs
power density
Power generation
Pulse measurements
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Silicon substrates
Transistors
trapping effects
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Summary:Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current gain cutoff frequency (F T ) of 50 GHz are achieved for a 0.25 μm gate length device. Pulsed and large signal measurements show the good quality of the epilayer and the device processing. The trapping phenomena are minimized and consequently an output power density of 5.1 W/mm is reached at 18 GHz on a 2×50×0.25 μm 2 HEMT with a power gain of 9.1dB.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.860385