Fabrication of Ge quantum dots doped TiO₂ films with high optical absorption properties via layer-by-layer ion-beam sputtering

Ge quantum dots (QDs)-doped TiO₂ films were prepared by ion-beam sputtering. TEM results showed Ge QDs were in a uniform size distribution and high density. XPS indicated that Ge incorporated in the TiO₂ films was in elemental form. The Stranski–Krastanov growth mode was accounted for the growth of...

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Bibliographic Details
Published in:Materials letters 2012-01, Vol.67 (1), p.369-372
Main Authors: Li, Xiaoqing, He, Fang, Liu, Guigao, Huang, Yuan, Pan, Chengfu, Guo, Chungang
Format: Article
Language:English
Subjects:
absorption
Germanium
Infrared
Ion beams
Optical properties
Quantum dots
Sputtering
Titanium dioxide
transmission electron microscopy
X-ray photoelectron spectroscopy
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Summary:Ge quantum dots (QDs)-doped TiO₂ films were prepared by ion-beam sputtering. TEM results showed Ge QDs were in a uniform size distribution and high density. XPS indicated that Ge incorporated in the TiO₂ films was in elemental form. The Stranski–Krastanov growth mode was accounted for the growth of Ge QDs in TiO₂ films by AFM analysis. Optical absorption spectra exhibited the optical response of the Ge QDs-doped TiO₂ films was shifted from UV to the near infrared region, suggesting a good optical absorption property.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2011.09.111