A structure zone diagram including plasma-based deposition and ion etching

An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kineti...

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Bibliographic Details
Published in:Thin solid films 2010-05, Vol.518 (15), p.4087-4090
Main Author: Anders, André
Format: Article
Language:English
Subjects:
Approximation
Cross-disciplinary physics: materials science
rheology
Deposition
Deposition by sputtering
Etching and cleaning
Exact sciences and technology
Film thickness
Flux
Homologous temperature
Illustrations
Ion and electron beam-assisted deposition
ion plating
Ion etching
Kinetic energy
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Morphology
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma applications
Plasma assistance
Plasma-based ion implantation and deposition
Potential and kinetic energy
Stress
Structure zone diagram
Thin film deposition
Thin films
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Description
Summary:An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kinetic energy flux, and the net film thickness, which can be negative due to ion etching. It is stressed that the number of primary physical parameters affecting growth by far exceeds the number of available axes in such a diagram and therefore it can only provide an approximate and simplified illustration of the growth condition–structure relationships.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2009.10.145