Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage e...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2015-03, Vol.118 (3), p.1039-1042
Main Authors: Guillén-Cervantes, A., Silva-López, H., Becerril-Silva, M., Arias-Cerón, J. S., Campos-González, E., Medina-Torres, A. C., Zelaya-Ángel, O.
Format: Article
Language:English
Subjects:
Cadmium tellurides
Characterization and Evaluation of Materials
Condensed Matter Physics
Erosion
Laser ablation
Machines
Manufacturing
Nanocrystals
Nanotechnology
Optical and Electronic Materials
Photoluminescence
Physics
Physics and Astronomy
Processes
Pulsed lasers
Silicon substrates
Surfaces and Interfaces
Thin Films
X-ray diffraction
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Summary:CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (~2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-014-8866-5