Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates

The photoluminescence properties of the ZnTe epilayers grown on (100) GaAs substrates with various substrate temperatures are investigated. The spectral characteristics of both bound and free excitonic emissions measured at different measurement temperatures and excitation power, show that compared...

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Bibliographic Details
Published in:Thin solid films 2013-06, Vol.536, p.240-243
Main Authors: Zhang, Lei, Ji, Ziwu, Huang, Shulai, Wang, Huining, Xiao, Hongdi, Zheng, Yujun, Xu, Xiangang, Lu, Yun, Guo, Qixin
Format: Article
Language:English
Subjects:
Bearing steels
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Excitation
Excitation spectra
Excitons
Gallium arsenide
Gallium arsenides
Martensitic stainless steels
Materials science
Metal–organic chemical vapor deposition
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Other semiconductors
Photoluminescence
Physics
Specific materials
Spectral emissivity
Strain
Zinc telluride
Zinc tellurides
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Summary:The photoluminescence properties of the ZnTe epilayers grown on (100) GaAs substrates with various substrate temperatures are investigated. The spectral characteristics of both bound and free excitonic emissions measured at different measurement temperatures and excitation power, show that compared with the too low (390°C) or too high (440°C) substrate temperature, the moderate substrate temperature (around 420°C) is suitable to obtain a high-quality epilayer due to its narrowest spectral width and smallest strain. With increasing excitation power the peak energy of the free excitonic emission decreases linearly, while the spectral width remains an approximate constant. This implies that the decreasing peak energy should be attributed to an increasing strain with increasing the effective excited depth, and the increasing strain only reduces the bandgap, but does not cause much influence on the crystalline quality for each epilayer. Furthermore, the increasing strain also causes the ground state free excitons splitting into the light hole and heavy hole free excitons. •The strain in the epilayer depends on its growth temperature.•A temperature around 420°C is suitable to obtain high-quality ZnTe epilayer.•The strain increases with increasing the effective excited depth.•The strain was further confirmed by the split of the free exciton emission.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2013.04.040