Strain behavior of epitaxial Si1−xCx films on silicon substrates during dry oxidation

The effects of the oxidation of Si1−xCx films (x=0.0125) on Si (100) substrates were evaluated. Epitaxial Si1−xCx (x=0.0125) films were deposited by ultrahigh-vacuum chemical vapor deposition at 600°C. Oxidation at 800°C and 900°C under an O2 ambient in a tube furnace resulted in a decrease in subst...

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Bibliographic Details
Published in:Thin solid films 2013-11, Vol.546, p.226-230
Main Authors: Kim, S.-W., Yoo, J.-H., Koo, S.-M., Lee, H.-J., Ko, D.-H.
Format: Article
Language:English
Subjects:
Carbon
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Compressive properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Epitaxy
Exact sciences and technology
Formations
Interstitials
Materials science
Mechanical and acoustical properties
Methods of deposition of films and coatings
film growth and epitaxy
Nanobeam diffraction
Oxidation
Physical properties of thin films, nonelectronic
Physics
Segregations
Si1 − xCx
Silicon substrates
Strain engineering
Strain relaxation
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Vacuum deposition
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Summary:The effects of the oxidation of Si1−xCx films (x=0.0125) on Si (100) substrates were evaluated. Epitaxial Si1−xCx (x=0.0125) films were deposited by ultrahigh-vacuum chemical vapor deposition at 600°C. Oxidation at 800°C and 900°C under an O2 ambient in a tube furnace resulted in a decrease in substitutional C concentration, due to the formation of interstitial carbon or β-SiC precipitation. Transmission electron microscopy analyses indicated that the formation of β-SiC on the Si1−xCx layer occurred when the oxidation temperature exceeded 900°C. This indicates that relaxation of compressive stress in the depth direction occurred as the result of the formation of β-SiC. No evidence was found for the segregation of carbon at the top of the Si1−xCx layers during the oxidation of the Si1−xCx layer unlike the Ge pile up that occurs during the oxidation of Si1−xGex layers. •The effects of the oxidation of Si1−xCx films on Si (100) wafers were evaluated.•Strain relaxation was examined via high resolution X-ray diffraction method.•Strain relaxation occurred as the result of the formation of β-SiC phase.•Local strain variation was confirmed by using nanobeam electron diffraction.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2013.05.131