21.1: A 513-ppi FFS-Mode TFT-LCD using CAAC Oxide Semiconductor Fabricated by a 6-Mask Proces

A driving method which does not need planarity for high definition and enables low frequency driving was examined. Further, a 513‐ppi FFS‐mode liquid crystal display (LCD) panel with high aperture ratio was fabricated via a six‐mask process, using a technique that combines an oxide semiconductor and...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2014-06, Vol.45 (1), p.263-266
Main Authors: Yamashita, Akio, Kubota, Daisuke, Moriya, Koji, Kubota, Yusuke, Jikumaru, Mika, Nakano, Masaru, Baba, Haruyuki, Hirakata, Yoshiharu, Koyama, Jun, Yamazaki, Shunpei, Katayama, Masahiro, Misawa, Chieko, Matsukizono, Hiroshi, Kanzaki, Yohsuke, Kaneko, Seiji, Ueda, Naoki, Mori, Shigeyasu, Matsuo, Takuya
Format: Article
Language:English
Subjects:
6-mask process
Apertures
CAAC-OS
Conductors (devices)
electrode structure
FFS-Mode
high aperture ratio
High definition
LCDs
liquid crystal
Liquid crystal displays
Low frequencies
oxide conductor
Oxides
photo-alignment
Semiconductors
step structure
Technical papers
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Summary:A driving method which does not need planarity for high definition and enables low frequency driving was examined. Further, a 513‐ppi FFS‐mode liquid crystal display (LCD) panel with high aperture ratio was fabricated via a six‐mask process, using a technique that combines an oxide semiconductor and an oxide conductor.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2014.tb00072.x